DocumentCode :
1278080
Title :
Evaluation of CVD/PVD multilayered seed for electrochemical deposition of Cu-damascene interconnects
Author :
Furuya, Akira ; Tagami, Masayoshi ; Shiba, Kazutoshi ; Kikuta, Kuniko ; Hayashi, Yoshihiro
Author_Institution :
NEC Corp., Kanagawa, Japan
Volume :
49
Issue :
5
fYear :
2002
fDate :
5/1/2002 12:00:00 AM
Firstpage :
733
Lastpage :
738
Abstract :
Multilayered seed for electrochemical deposition (ECD) of Cu was investigated to develop narrow-pitched, dual-damascene Cu interconnects that will be required for future ULSI devices. The seed was obtained by the physical vapor deposition (PVD) of a Cu film followed by the chemical vapor deposition (CVD) of a Cu film. The seed of the thinner CVD-Cu element and the thicker PVD-Cu element demonstrated better filling characteristics in high-aspect ratio vias. Good current-voltage characteristics were demonstrated using the multilayered seed technique with Cu dual-damascene interconnects (0.28 μm minimum via size) resulting in a via resistance about 0.7 Ω. In addition, ring-oscillator circuits were fabricated by integrating the double-layered interconnects with a transistor having a 0.18 μm gate width. The propagation delay per inverter, which had an interconnect with 104 vias, was about 6 ns. We successfully fabricated multilevel Cu-damascene interconnects, which are available for future high-speed devices using this multilayered seed technique
Keywords :
ULSI; copper; electrodeposition; integrated circuit interconnections; metallic thin films; Cu; Cu dual-damascene interconnect; Cu film; ULSI device; chemical vapor deposition; current-voltage characteristics; electrochemical deposition; high aspect ratio structure; high-speed device; multilayered seed; multilevel interconnect; physical vapor deposition; propagation delay; ring oscillator; via filling; via resistance; Adhesives; Atherosclerosis; Chemical elements; Chemical vapor deposition; Conducting materials; Delay; Electric resistance; Fabrication; Integrated circuit interconnections; Ultra large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.998578
Filename :
998578
Link To Document :
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