DocumentCode :
1278103
Title :
AC output conductance of SOI MOSFETs and impact on analog applications
Author :
Sinitsky, Dennis ; Tu, Robert ; Liang, Chunlin ; Chan, Mansun ; Bokor, Jeffrey ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
18
Issue :
2
fYear :
1997
Firstpage :
36
Lastpage :
38
Abstract :
We report a frequency-dependent output conductance of partially depleted SOI MOSFETs. For high-frequency analog applications, the output conductance is less than half and the dynamic range of V/sub d/ is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.
Keywords :
MOSFET; silicon-on-insulator; AC output conductance; body charging capacitance; dynamic range; high-frequency analog applications; partially depleted SOI MOSFET; Capacitance; Circuit simulation; Digital circuits; Doping; Dynamic range; Fabrication; Frequency; Impact ionization; Implants; MOSFET circuits;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.553036
Filename :
553036
Link To Document :
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