• DocumentCode
    1278157
  • Title

    High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

  • Author

    Serikawa, Tadashi ; Omata, Fujio

  • Author_Institution
    Cyberspace Labs., NTT Corp., Tokyo, Japan
  • Volume
    49
  • Issue
    5
  • fYear
    2002
  • fDate
    5/1/2002 12:00:00 AM
  • Firstpage
    820
  • Lastpage
    825
  • Abstract
    We have developed a low-temperature fabrication process (⩽ 200°C for high-quality polycrystalline Si thin-film transistors (poly-Si TFTs) on flexible stainless-steel foils. The fabrication processes is realized through sputter deposition of thin films, including active-Si and gate-SiO2 films, crystallization of Si films by KrF excimer laser irradiation, and inductively coupled plasma hydrogenation. High-quality n- and p-channel poly-Si TFTs are successfully fabricated without suffering from problems of substrate bending, film ablation, or cracking in films. The resulting n- and p-channel poly-Si TFTs showed mobilities of 106 and 122 cm2/V·s, respectively. This paper describes the deposition and properties of the sputtered Si films and the fabrication process and electrical characteristics of the poly-SiTFTs
  • Keywords
    elemental semiconductors; hydrogenation; laser beam annealing; plasma materials processing; recrystallisation annealing; semiconductor device manufacture; silicon; sputter deposition; thin film transistors; 200 C; Si-SiO2; active-Si films; electrical characteristics; excimer laser irradiation crystallization; flexible stainless-steel foils; gate-SiO2 films; inductively coupled plasma hydrogenation; low-temperature fabrication process; mobilities; n-channel poly-Si TFTs; p-channel poly-Si TFTs; polycrystalline Si TFTs; sputter deposition; sputtered Si films; thin-film transistors; Crystallization; Laser ablation; Optical coupling; Optical device fabrication; Plasmas; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.998590
  • Filename
    998590