Location- and Orientation-Controlled (100) and (110) Single-Grain Si TFTs Without Seed Substrate

Author

Chen, Tao ; Ishihara, Ryoichi ; Beenakker, Kees

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron. (DIMES), Delft Univ. of Technol., Delft, Netherlands

Volume

57

Issue

9

fYear

2010

Firstpage

2348

Lastpage

2352

Abstract

This paper reports on high-performance (100)- and (110)-oriented single-grain thin-film transistors (SG-TFTs) fabricated below 600°C without any seed substrate. Orientation has been controlled by μ-Czochralski process with an excimer laser. The field-effect mobility of the n-channel transistor is 998 cm²/V·s for (100) SG-TFTs and 811 cm²/V·s for (110) SG-TFTs. The field-effect mobility of the p-channel transistor is 292 cm²/V ·s for (100) SG-TFTs and 429 cm²/V ·s for (110) SG-TFTs.

Keywords

excimer lasers; semiconductor thin films; thin film transistors; μ-Czochralski process; SG-TFT; excimer laser; field-effect mobility; n-channel transistor; p-channel transistor; single-grain thin-film transistor; CMOS technology; Crystallization; Crystallography; Electron mobility; FETs; Nickel; Position control; Process control; Silicon; Silicon on insulator technology; Substrates; Surface treatment; Tensile stress; Thin film transistors; Laser crystallization; thin-film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2055510

Filename

5530367