Title :
Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications
Author :
Pang, Yon-Sup ; Brews, John R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
5/1/2002 12:00:00 AM
Abstract :
We present a model for subthreshold current in deep-submicrometer pocket n-MOSFETs based on the diffusion current transport equation, the quasi-two-dimensional (2-D) Poisson equation and a doping-density-dependent mobility model, and a model for above-threshold current in deep-submicrometer pocket n-MOSFETs based on the drift-diffusion current transport equation for nonuniformly doped MOSFETs, the charge-sheet approximation, a solution of the one-dimensional (1-D) Poisson equation, a quasi-2-D model for the velocity saturation region, longitudinal- and transverse-field-dependent mobility models. The analytic models for subthreshold and above-threshold currents are used to efficiently construct viable design spaces locating well-designed 0.1-μm pocket n-MOSFETs that meet all the device design specifications of off-state (leakage) current, on-state (drive) current, and power-supply voltage. The model for subthreshold current correctly predicts an increase in off-state current in sub-100 nm pocket n-MOSFETs. The model for above-threshold current generates ID-VDS characteristics of a variety of deep-submicrometer pocket n-MOSFETs
Keywords :
MOSFET; Poisson equation; carrier mobility; low-power electronics; semiconductor device models; 0.1 micron; above-threshold current models; charge-sheet approximation; deep-submicrometer pocket n-MOSFETs; diffusion current transport equation; doping-density-dependent mobility model; drift-diffusion current transport equation; longitudinal-field-dependent mobility models; low-voltage applications; nonuniformly doped MOSFETs; off-state current; on-state current; one-dimensional Poisson equation; pocket n-MOSFETs; power-supply voltage; quasi-two-dimensional Poisson equation; subthreshold current models; transverse-field-dependent mobility models; velocity saturation region; Character generation; Doping; Implants; MOSFET circuits; Poisson equations; Polynomials; Predictive models; Semiconductor process modeling; Subthreshold current; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on