Title :
Size dependence of the magnetic and electrical properties of the spin-valve transistor
Author :
Kim, Sungdong ; van´t Erve, O.M.J. ; Vlutters, R. ; Jansen, R. ; Lodder, J.C.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
fDate :
5/1/2002 12:00:00 AM
Abstract :
The electrical and magnetic properties of the spin-valve transistor (SVT) are investigated as a function of transistor size. A new fabrication process, designed to study the size dependence of the SVT properties, uses: silicon-on-insulator (SOI) wafers, a combination of ion beam and wet etching and a negative tone photoresist (SU8) as an insulating layer. The Si/Pt emitter and Si/Au collector Schottky barrier height do not depend on the transistor dimensions. The parasitic leakage current of the Si/Au collector is, however, proportional to its area. The relative collector current change with magnetic field is 240%, independent of size, while the transfer ratio starts to decrease for SVTs with an emitter area below 25 × 25 μm2. The maximum input current is found to be limited by the maximum current density allowed in the base (1.7 × 107 A/cm2), which is in agreement with the maximum current density for spin valves
Keywords :
Schottky barriers; current density; etching; hot electron transistors; leakage currents; magnetoresistance; photolithography; semiconductor device reliability; silicon-on-insulator; spin valves; sputter etching; Pt-Ni80Fe20-Au-Co-Au; SOI wafers; Si-Au; Si-Pt; Si/Au collector Schottky barrier height; Si/Pt emitter Schottky barrier height; electrical properties; fabrication process; ferromagnet-semiconductor hybrid structure; hot electron; ion beam etching; magnetic properties; magnetocurrent; maximum current density; maximum input current; negative tone photoresist insulating layer; parasitic leakage current; relative collector current; reliability; size dependence; spin-valve transistor; transfer ratio; transistor size; wet etching; Current density; Fabrication; Gold; Insulation; Ion beams; Magnetic properties; Process design; Resists; Silicon on insulator technology; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
