• DocumentCode
    1278205
  • Title

    The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs

  • Author

    Borgarino, Mattia ; Bary, Laurent ; Vescovi, Davide ; Menozzi, Roberto ; Monroy, A. ; Laurens, M. ; Plana, Robert ; Fantini, Fausto ; Graffeuil, Jacques

  • Author_Institution
    Dipt. di Ingegneria dell´´Informazione, Modena Univ., Italy
  • Volume
    49
  • Issue
    5
  • fYear
    2002
  • fDate
    5/1/2002 12:00:00 AM
  • Firstpage
    863
  • Lastpage
    870
  • Abstract
    The measurement of the correlation between the noise generators is a mandatory issue for the low-frequency noise modeling of bipolar transistors, and it is recognized as a very hard experimental task. In the present work, we introduce the concept of correlation resistance and we demonstrate that it can be usefully employed as a guideline for the low-frequency noise modeling in terms of intrinsic noise sources. As a proof of concept, the investigation technique is applied to submicron, BiCMOS-compatible Si/SiGe heterojunction bipolar transistors. It is pointed out that a satisfactory description of the transistor low-frequency noise behavior can be obtained by taking into account noise sources associated with surface recombination/fluctuation in the extrinsic base region
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; silicon; surface recombination; Si-SiGe; Si/SiGe HBTs; correlation resistance; extrinsic base region; heterojunction bipolar transistor; intrinsic noise sources; low-frequency noise compact modeling; submicron BiCMOS-compatible Si/SiGe heterojunction bipolar transistors; surface recombination/fluctuation; Bipolar transistors; Electrical resistance measurement; Fluctuations; Germanium silicon alloys; Guidelines; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise measurement; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.998596
  • Filename
    998596