Title :
A high-voltage monolithic isolator for a communication network interface
Author :
Akiyama, Noboru ; Kojima, Yasuyuki ; Nemoto, Minehiro ; Yukutake, Seigo ; Iwasaki, Takayuki ; Amishiro, Masatsugu ; Kanekawa, Nobuyasu ; Watanabe, Atsuo ; Takeuchi, Yusuke
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
fDate :
5/1/2002 12:00:00 AM
Abstract :
We have developed a multichannel monolithic isolator that can provide 2.3 kV ac isolation and 100-MHz signal transmission. The isolator uses high-voltage, on-chip isolator technology including trench isolation with buried oxide on the silicon-on-oxide (SOI) substrate and 0.4 μm CMOS driver and receiver circuits. This technology lets us produce a four-channel monolithic isolator with an area of 1.5 mm2 and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. These operating values suggest that the monolithic isolator can miniaturize the communication interface and reduce power consumption since discrete devices, such as transformers and opto-couplers, are unnecessary. We have also developed a one-chip modem interface LSI that includes the multichannel isolator and an analog front-end circuit
Keywords :
CMOS integrated circuits; buried layers; isolation technology; large scale integration; modems; power integrated circuits; silicon-on-insulator; telecommunication networks; 0.4 micron; 0.5 mA; 100 MHz; 2.3 kV; 50 MHz; AC isolation; CMOS driver circuit; CMOS receiver circuit; SOI substrate; analog front-end circuit; buried oxide; communication network interface; high-voltage multichannel monolithic isolator; power consumption; signal transmission; single-chip modem interface LSI; trench isolation; CMOS technology; Communication networks; Driver circuits; Energy consumption; Frequency; Isolation technology; Isolators; Large scale integration; Modems; Transformers;
Journal_Title :
Electron Devices, IEEE Transactions on
