DocumentCode
1278255
Title
Modeling of the CoolMOSTM transistor - Part I: Device physics
Author
Daniel, Bobby J. ; Parikh, Chetan D. ; Patil, Mahesh B.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Volume
49
Issue
5
fYear
2002
fDate
5/1/2002 12:00:00 AM
Firstpage
916
Lastpage
922
Abstract
CoolMOSTM is a novel power MOSFET with a "superjunction" for its drift region, which results in a vastly improved relationship between the on resistance and breakdown voltage. The presence of the superjunction makes the device physics very interesting and complicated. In this paper, we present simulation results aimed at understanding the device operation both in the on state and in the off state. Quasi saturation of the drain current is analyzed, and it is shown that it can be prevented by increasing the doping density of the drift region. An analytic model of the JFET-like drift region is presented. A CoolMOSTM transistor model based on the simulation results described here will be presented in an accompanying paper
Keywords
power MOSFET; semiconductor device models; CoolMOS transistor; analytic model; breakdown voltage; device simulation; doping density; drain current; drift region; on-resistance; power MOSFET; quasi-saturation; simulation; superjunction; Circuit simulation; Doping; MOSFET circuits; Physics; Power MOSFET; Quasi-doping; Semiconductor process modeling; Strips; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.998603
Filename
998603
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