Title :
Modeling of the CoolMOSTM transistor - Part I: Device physics
Author :
Daniel, Bobby J. ; Parikh, Chetan D. ; Patil, Mahesh B.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
fDate :
5/1/2002 12:00:00 AM
Abstract :
CoolMOSTM is a novel power MOSFET with a "superjunction" for its drift region, which results in a vastly improved relationship between the on resistance and breakdown voltage. The presence of the superjunction makes the device physics very interesting and complicated. In this paper, we present simulation results aimed at understanding the device operation both in the on state and in the off state. Quasi saturation of the drain current is analyzed, and it is shown that it can be prevented by increasing the doping density of the drift region. An analytic model of the JFET-like drift region is presented. A CoolMOSTM transistor model based on the simulation results described here will be presented in an accompanying paper
Keywords :
power MOSFET; semiconductor device models; CoolMOS transistor; analytic model; breakdown voltage; device simulation; doping density; drain current; drift region; on-resistance; power MOSFET; quasi-saturation; simulation; superjunction; Circuit simulation; Doping; MOSFET circuits; Physics; Power MOSFET; Quasi-doping; Semiconductor process modeling; Strips; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
