Title :
A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices
Author :
He, Jin ; Wang, Yangyuan ; Zhang, Xing ; Xi, Xuemei ; Chan, Mansun ; Huang, Ru ; Hu, Chenming
Author_Institution :
Dept. of Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
5/1/2002 12:00:00 AM
Abstract :
In this brief, an approximate solution of the breakdown voltage for a 6H-SiC parallel-plane junction is presented. Then a simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices is performed. It is shown that the reciprocal of the punch-through factor should be 16/21=0.76 for the optimum punch-through junctions used in 6H-SiC unipolar power devices and 5/21=0.24 for bipolar power devices. Analytical expressions for the optimal base doping concentration and base thickness are obtained as a function of the breakdown voltage subject to minimum constraints on the on-state resistance and base width for unipolar power and bipolar power devices, respectively
Keywords :
power semiconductor devices; semiconductor device breakdown; semiconductor junctions; silicon compounds; wide band gap semiconductors; 6H-SiC punch-through junction; SiC; base doping concentration; bipolar power device; breakdown voltage; design optimization; on-state resistance; parallel-plane junction; punch-through factor; unipolar power device; Breakdown voltage; Charge carrier processes; Doping; Electric breakdown; Electric resistance; Helium; Ionization; Optimization methods; Silicon carbide; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
