Title :
4H-SiC rectifiers with dual metal planar Schottky contacts
Author :
Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O´Neill, A.G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
fDate :
5/1/2002 12:00:00 AM
Abstract :
4H-SiC rectifiers with dual metal planar (DMP) Schottky contacts have been fabricated with a main titanium and an annular nickel contact. Fabricated diodes display low reverse leakage currents and low forward barrier heights. The diodes exhibited a high on/off current ratio (at 1 V/-500 V) exceeding 5.108
Keywords :
Schottky barriers; Schottky diodes; leakage currents; nickel; power semiconductor diodes; semiconductor device breakdown; silicon compounds; solid-state rectifiers; titanium; wide band gap semiconductors; -500 V; 1 V; 1250 V; 4H-SiC rectifiers; Ni; Schottky barrier diodes; SiC; Ti; annular Ni contact; breakdown voltage; dual metal planar Schottky contacts; high on/off current ratio; low forward barrier heights; low reverse leakage currents; main Ti contact; Contacts; Nickel; P-i-n diodes; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Titanium; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
