• DocumentCode
    1278331
  • Title

    A guideline for designing chalcogenide-based glasses for threshold switching characteristics

  • Author

    Prakash, S. ; Asokan, S. ; Ghare, D.B.

  • Author_Institution
    Dept. of Instrumentations, Indian Inst. of Sci., Bangalore, India
  • Volume
    18
  • Issue
    2
  • fYear
    1997
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    Chalcogenide-based switching materials have potential applications in power control and information storage. In this work, an approach has been suggested to design chalcogenide-based amorphous materials for threshold or memory switching characteristics. Using this guideline, glasses have been formed in a new chalcogenide Al-Ge-As-Te system. All the samples studied have been found to exhibit threshold switching characteristics, which proves the validity of the suggested guideline.
  • Keywords
    aluminium compounds; chalcogenide glasses; electrical conductivity transitions; germanium compounds; semiconductor switches; Al-Ge-As-Te; amorphous material; chalcogenide glass; information storage; memory switching; power control; threshold switching; Amorphous materials; Atomic measurements; Bonding; Composite materials; Crystalline materials; Crystallization; Glass; Guidelines; Material storage; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.553039
  • Filename
    553039