Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Author

Wu, L.W. ; Chang, S.J. ; Wen, T.C. ; Su, Y.K. ; Chen, J.F. ; Lai, W.C. ; Kuo, C.H. ; Chen, C.H. ; Sheu, J.K.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

38

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

446

Lastpage

450

Abstract

A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers

Keywords

III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; interface phenomena; light emitting diodes; photoluminescence; semiconductor doping; semiconductor quantum wells; 20 mA; 3.5 V; 4.52 V; InGaN-GaN; InGaN-GaN MQW LEDs; InGaN-GaN multiple quantum-well blue light emitting diodes; Si; Si-doped barrier; Si-doping; X-ray diffraction; barrier layers; crystal qualities; forward voltage; interfacial qualities; luminous intensity; unintentionally doped barrier; Doping; Gallium nitride; Indium; Light emitting diodes; Microelectronics; Quantum well devices; Radiative recombination; Semiconductor diodes; Temperature; X-ray diffraction;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.998615

Filename

998615