CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates

Author

Csutak, S.M. ; Dakshina-Murthy, S. ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

38

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

477

Lastpage

480

Abstract

We report planar silicon interdigitated p-i-n photodiodes with waveguide-grating couplers fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology on 200-nm-thick SOI wafers with no additional fabrication steps. A waveguide-grating coupler with a period of 265 nm increased the quantum efficiency by a factor of four compared to a photodiode without a coupler. The dark current was 10 pA at -3-V bias and the bandwidth was 4.1 GHz (RC limited)

Keywords

CMOS integrated circuits; dark conductivity; diffraction gratings; elemental semiconductors; infrared detectors; integrated optoelectronics; optical couplers; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; silicon; silicon-on-insulator; -3 V; 10 pA; 200 nm; 265 nm; 4.1 GHz; 850 nm; CMOS-compatible planar Si waveguide-grating-coupler photodetectors; RC limited bandwidth; SOI substrates; SOI wafers; Si; dark current; planar silicon interdigitated p-i-n photodiodes; quantum efficiency; silicon-on-insulator substrates; standard CMOS technology; waveguide-grating couplers; Couplers; Diffraction; Optical receivers; Optical waveguides; PIN photodiodes; Photodetectors; Planar waveguides; Silicon on insulator technology; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.998619

Filename

998619