Title :
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
Author :
Liu, Leitao ; Kumar, S. Bala ; Ouyang, Yijian ; Guo, Jing
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
The performance limits of monolayer transition metal dichalcogenide ( MX2) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX2. We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX2 promising 2-D materials for future nanoelectronic device applications.
Keywords :
MOSFET; ballistic transport; high-k dielectric thin films; nanoelectronics; 2D transition MX2; ab initio theory; ballistic MOSFET model; ballistic regime; high-κ gate insulator; lattice structures; monolayer MX2 transistors; monolayer transition metal dichalcogenide transistors; nanoelectronic device applications; performance limits; silicon transistors; Atomic layer deposition; Logic gates; MOSFET circuits; Photonic band gap; Silicon; Transistors; 2-D transition metal dichalcogenide $(hbox{MX}_{2})$; Ab initio theory; ballistic transport; band structure calculation; new direct-gap semiconductor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2159221
