Title :
High field hole velocity and velocity overshoot in silicon inversion layers
Author :
Sinitsky, D. ; Assaderaghi, F. ; Hu, C. ; Bokor, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We report measurements of the drift velocity of holes in silicon inversion layers. The saturation velocity of holes at 300 K is found to be strongly dependent on the effective vertical field. No hole velocity overshoot was observed down to 0.16 μm channel length at room temperature. At 77 K, hole velocity saturation is much less pronounced, and a 10% higher average velocity is observed for 0.16 μm channel length as compared to 0.36 μm channel length.
Keywords :
MOSFET; elemental semiconductors; high field effects; hole mobility; inversion layers; semiconductor device models; silicon; 0.16 micron; 0.36 micron; 77 to 300 K; MEDICI simulator; PMOSFET; Si; Si inversion layers; effective vertical field; high field hole velocity; hole drift velocity; hole saturation velocity; p-MOSFET; p-channel MOSFET; velocity overshoot; Back; Electric resistance; Electron mobility; MOSFET circuits; Medical simulation; Semiconductor films; Silicon; Temperature; Velocity measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
