Title :
Random telegraph signals in a radiation-hardened CMOS active pixel sensor
Author :
Bogaerts, J. ; Dierickx, B. ; Mertens, R.
Author_Institution :
Dept. of Electr. Eng., Katholieke Univ., Leuven, Belgium
fDate :
2/1/2002 12:00:00 AM
Abstract :
The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types
Keywords :
CMOS image sensors; dark conductivity; proton effects; radiation hardening (electronics); silicon radiation detectors; amplitude; dark current; operating temperature; proton energy; proton fluence; radiation-hardened CMOS active pixel sensor; random telegraph signal behavior; time constants; CMOS image sensors; Calibration; Current measurement; Dark current; Fluctuations; Protons; Switches; Telegraphy; Temperature dependence; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.998649
