DocumentCode
1278577
Title
Random telegraph signals in a radiation-hardened CMOS active pixel sensor
Author
Bogaerts, J. ; Dierickx, B. ; Mertens, R.
Author_Institution
Dept. of Electr. Eng., Katholieke Univ., Leuven, Belgium
Volume
49
Issue
1
fYear
2002
fDate
2/1/2002 12:00:00 AM
Firstpage
249
Lastpage
257
Abstract
The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types
Keywords
CMOS image sensors; dark conductivity; proton effects; radiation hardening (electronics); silicon radiation detectors; amplitude; dark current; operating temperature; proton energy; proton fluence; radiation-hardened CMOS active pixel sensor; random telegraph signal behavior; time constants; CMOS image sensors; Calibration; Current measurement; Dark current; Fluctuations; Protons; Switches; Telegraphy; Temperature dependence; Temperature sensors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.998649
Filename
998649
Link To Document