Title :
0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency
Author :
Hara, N. ; Suehiro, H. ; Shima, M. ; Kuroda, S.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
P-channel Heterostructure Field Effect Transistors (HFETs) with a 0.3-μm gate were fabricated by Mg ion implantation. The maximum transconductance was 68 mS/mm and there was no serious drain or gate leakage current, regardless of this short gate length. The gate turn on voltage (@I/sub gs/=-1 μA/μm) was -2.1 V and its absolute value was large enough for use in complementary HFETs. S-parameters measurements showed a very high cut-off frequency of over 10 GHz. Results indicated the superiority of less-diffusive Mg ion implantation for forming p/sup +/-layer in p-channel HFETs.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; indium compounds; ion implantation; microwave field effect transistors; -2.1 V; 0.3 micron; 10 GHz; 68 mS/mm; AlGaAs:Mg-InGaAs; Mg ion implantation; S-parameters measurements; cutoff frequency; heterostructure FET; heterostructure field effect transistors; maximum transconductance; p-channel HFET; p/sup +/-layer formation; short gate length; Cutoff frequency; Frequency measurement; HEMTs; Indium gallium arsenide; Ion implantation; Leakage current; MODFETs; Scattering parameters; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
