4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

Author

Moore, Karen E. ; Weitzel, Charles E. ; Nordquist, Kevin J. ; Pond, Lauren L., III ; Palmour, John W. ; Allen, Scott ; Carter, Calvin H., Jr.

Author_Institution

Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA

Volume

18

Issue

2

fYear

1997

Firstpage

69

Lastpage

70

Abstract

4H-SiC MESFET´s on conducting substrates were fabricated and characterized for large-signal performance over a wide range of gate and drain biases. At V/sub ds/=25 V the current density was 225 mA/mm and the peak f/sub max/ for these devices was 16 GHz. At V/sub ds/=50 V and I/sub dq/=50% I/sub dss/, the power density was 3.3 W/mm at 850 MHz. At V/sub ds/=40 V and I/sub dq/=5% I/sub dss/, the power added efficiency was 65.7%, which is the highest ever reported for a SiC MESFET. This is the first Class B data presented for a SiC MESFET.

Keywords

UHF field effect transistors; current density; power MESFET; power field effect transistors; silicon compounds; wide band gap semiconductors; 10 to 50 V; 4H-SiC MESFET; 65.7 percent; 850 MHz to 16 GHz; Class B data; RF power devices; SiC; conducting substrates; current density; drain biases; gate biases; large-signal performance; power added efficiency; Annealing; Electron mobility; Etching; Frequency; Lithography; MESFETs; Metallization; Power measurement; Silicon carbide; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.553047

Filename

553047