Title :
High-resolution cross-sectional imaging of MOSFETs by scanning resistance microscopy
Author :
Nxumalo, J.N. ; Shimizu, D.T. ; Thomson, D.J. ; Simard-Normadin, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Manitoba Univ., Winnipeg, Man., Canada
Abstract :
The authors present high-resolution (/spl ap/40 nm) Scanning Resistance Microscopy (SRM) images of MOSFET cross sections taken with commercially available boron-doped diamond tips. The diamond tips were found to offer significant improvement in resolution over metal tips. The SRM profiles using diamond tips can delineate the source/drain regions as well as the lightly-doped drains. Furthermore, the SRM profiles allow delineation between silicide and polysilicon on the gate, as well as delineation between the silicide and diffusion in the source/drain regions.
Keywords :
MOSFET; microscopy; B-doped diamond tips; C:B; MOSFET cross sections; SRM images; cross-sectional imaging; high-resolution imaging; lightly-doped drains; polysilicon; scanning resistance microscopy; silicide; source/drain regions; Atomic force microscopy; Electrical resistance measurement; High-resolution imaging; MOSFET circuits; Performance evaluation; Probes; Semiconductor device doping; Spatial resolution; Surface resistance; Surface topography;
Journal_Title :
Electron Device Letters, IEEE
