Low thermal impedance MMIC technology

Author

Hill, Darrell ; Yarborough, Ron ; Kim, Tae ; Chau, Hin-Fai

Author_Institution

Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA

Volume

7

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

36

Lastpage

38

Abstract

A technology has been developed that reduces the thermal resistance of monolithic microwave integrated circuits (MMICs). Novel processing techniques are used to fabricate thin-film capacitors and microstrip lines on the back side of the chip. The front side of the chip is metallized to serve as the ground-plane; the completed chip is assembled inverted so that the active devices are next to the heat sink, but the chip otherwise is a drop-in replacement for conventional MMICs. With very conservative deembedding of circuit losses, an AlGaAs/GaAs heterojunction bipolar transistor (HBT) fabricated in this technology achieved record performance at 20 GHz: over 1.2 W output power with 53% power-added efficiency while operating at 12.7 V

Keywords

III-V semiconductors; aluminium compounds; bipolar MMIC; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; thermal resistance; 1.2 W; 12.7 V; 20 GHz; 53 percent; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; active device; circuit loss; heat sink; low thermal impedance MMIC technology; metallization; microstrip line; monolithic microwave integrated circuit; thermal impedance; thermal resistance; thin-film capacitor; Electromagnetic heating; Heterojunction bipolar transistors; Impedance; Integrated circuit technology; MMICs; Microwave devices; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Thermal resistance;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.553051

Filename

553051