Title :
Low resistance ohmic contacts to p-Ge/sub 1-x/Cx on Si
Author :
Shao, Xiaoping ; Rommel, S.L. ; Orner, B.A. ; Berger, Paul R. ; Kolodzey, J. ; Unruh, K.M.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Abstract :
We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge/sub 0.9983/C/sub 0.0017/ grown on a
Keywords :
aluminium; contact resistance; elemental semiconductors; germanium alloys; gold; metallisation; molecular beam epitaxial growth; ohmic contacts; semiconductor epitaxial layers; semiconductor growth; silicon; thermionic electron emission; tungsten; Al-GeC-Si; Au-GeC-Si; Si; W-GeC-Si; molecular beam epitaxy; ohmic contacts; specific contact resistance; thermionic field emission mechanism; Annealing; Carbon dioxide; Contact resistance; Electrical resistance measurement; Gold; Metallization; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature distribution;
Journal_Title :
Electron Device Letters, IEEE
