• DocumentCode
    1278722
  • Title

    Low resistance ohmic contacts to p-Ge/sub 1-x/Cx on Si

  • Author

    Shao, Xiaoping ; Rommel, S.L. ; Orner, B.A. ; Berger, Paul R. ; Kolodzey, J. ; Unruh, K.M.

  • Author_Institution
    Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
  • Volume
    18
  • Issue
    1
  • fYear
    1997
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge/sub 0.9983/C/sub 0.0017/ grown on a
  • Keywords
    aluminium; contact resistance; elemental semiconductors; germanium alloys; gold; metallisation; molecular beam epitaxial growth; ohmic contacts; semiconductor epitaxial layers; semiconductor growth; silicon; thermionic electron emission; tungsten; Al-GeC-Si; Au-GeC-Si; Si; W-GeC-Si; molecular beam epitaxy; ohmic contacts; specific contact resistance; thermionic field emission mechanism; Annealing; Carbon dioxide; Contact resistance; Electrical resistance measurement; Gold; Metallization; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.553059
  • Filename
    553059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1278722