Influence of ordering on the polarization characteristics of GaInP vertical-cavity surface-emitting lasers

Author

Chen, Y.H. ; Wilkinson, C.I. ; Woodhead, J. ; David, J.P.R. ; Button, C.C. ; Robson, P.N.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

Volume

9

Issue

2

fYear

1997

Firstpage

143

Lastpage

145

Abstract

We investigate the polarization characteristics of GaInP vertical-cavity surface-emitting lasers (VCSEL´s) as a function of substrate misorientation and quantum-well strain. All the structures investigated show dominant polarization along the [110] direction. The polarization selectivity is found to be essentially independent of QW strain but increases significantly as the substrate misorientation is reduced from 10/spl deg/ to 3/spl deg/. These results provide clear experimental evidence that the major contribution to the polarization characteristics of GaInP VCSEL´s is a consequence of ordering-induced gain anisotropy.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; GaInP; GaInP laser; MOVPE; [110] direction; low pressure metal-organic vapor phase epitaxy; ordering-induced gain anisotropy; polarization characteristics; polarization selectivity; quantum-well strain; substrate misorientation; vertical-cavity surface-emitting lasers; Anisotropic magnetoresistance; Capacitive sensors; Distributed Bragg reflectors; Fiber lasers; Indium gallium arsenide; Optical polarization; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.553066

Filename

553066