Title :
Cavity length dependence of high-speed 1.55-μm multiple-quantum-well laser diode characteristics
Author :
O, Beom-Hoan ; Choo, Heung Ro ; Kim, Hyung Mun ; Kim, Jeong Soo ; Oh, Dae Kon ; Kim, Hye Rim ; Kim, Hong Man ; Pyun, Kwang Eui
Author_Institution :
Dept. of Electron. Mater. & Devices Eng., Inha Univ., Inchon, South Korea
Abstract :
Spontaneous emission spectra below threshold were measured from the side wall of InGaAs QW laser diodes to extract laser design parameters such as cavity length dependence of gain, linewidth enhancement factor, and serial resistance. The threshold current varies according to the change of cavity length, and thus, the lasing peak shifts and the serial resistance changes. It is interesting that the linewidth enhancement factor, however, is not deteriorated by shortening cavity length. The short cavity length would rather improve the linewidth enhancement factor mainly by shifting the lasing peak to smaller wavelength side, where the linewidth enhancement factor is inherently low.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; laser cavity resonators; laser variables measurement; optical design techniques; optical transmitters; quantum well lasers; spectral line breadth; spontaneous emission; InGaAs; InGaAs QW laser diodes; below threshold; cavity length; cavity length dependence; high-speed /spl mu/m multiple-quantum-well laser; inherently low; laser design; laser design parameter; laser diode characteristics; lasing peak shift; linewidth enhancement factor; serial resistance; serial resistance change; short cavity length; side wall; spontaneous emission spectra; threshold current; Diode lasers; Fiber lasers; Gain measurement; Indium phosphide; Optical design; Power lasers; Quantum well devices; Semiconductor lasers; Spontaneous emission; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
