Title :
High-power/low-threshold type-II interband cascade mid-IR laser-design and modeling
Author :
Vurgaftman, I. ; Meyer, J.R. ; Ram-Mohan, L.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We present an optimized design and detailed numerical simulations for a mid-IR type-II interband InGaSb QW cascade laser (T2ICL) with InAs-In/sub 0.3/Ga/sub 0.7/Sb active quantum wells. It is shown that a 15-period T2ICL operating at 300 K and emitting at 3.15 μm should achieve a much higher differential quantum efficiency (maximum of 0.9 W/A per facet at 300 K) than conventional mid-IR bipolar injection lasers, and a threshold current density much lower than for the intersubband quantum cascade laser.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser theory; laser transitions; numerical analysis; optical design techniques; optimisation; quantum well lasers; semiconductor device models; 3.15 mum; 300 K; InAs-In/sub 0.3/Ga/sub 0.7/Sb; InAs-In/sub 0.3/Ga/sub 0.7/Sb active quantum wells; differential quantum efficiency; intersubband quantum cascade laser; low-threshold type-II interband cascade mid-IR laser design; mid-IR bipolar injection lasers; mid-IR laser modeling; mid-IR type-II interband InGaSb QW cascade laser; numerical simulations; optimized design; threshold current density; Charge carrier processes; Design optimization; Diode lasers; Electron emission; Energy states; Laser modes; Optical design; Power generation; Quantum cascade lasers; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
