Influence of photon reabsorption on the transfer efficiency of output intensity in semiconductor microcavities

Photon reabsorption effect on the transfer efficiency /spl beta//sub t/ of half-wavelength semiconductor microcavities was investigated by examining the excitation intensity dependence of the output light intensity. It is shown that /spl beta//sub t/ increases under intense excitation, and approaches to over-all spontaneous emission coupling coefficient /spl beta//sub 0/, as a result of the elimination of photon reabsorption. The results clearly demonstrate that the photon reabsorption is the predominant mechanism of the suppression of /spl beta//sub t/ at weak excitation, especially in the case of half-wavelength high-Q cavities.