Title :
Asymmetric quantum wells with enhanced QCSE: modulation behaviour and application for integrated laser/modulator
Author :
Steinmann, Philipp ; Borchert, Bernd ; Stegmuller, Bernhard
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
We have optimized asymmetric InGaAsP QWs with respect to the quantum confined Stark effect (QCSE). We have found structures with a red shift of 40 meV at a field of 70 kV/cm. Moreover, it was our aim to find structures with a strong blue shift. A new principle for the integration of a laser and a modulator is presented, which is based on the application of blue shift asymmetric QW´s in the active layer for laser and modulator simultaneously. A calculation of the laser and modulation properties for a QW-structure with 27 meV blue shift at a field variation of 70 kV/cm is presented.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser theory; optimisation; quantum confined Stark effect; quantum well lasers; red shift; semiconductor device models; semiconductor quantum wells; spectral line shift; 27 meV; 40 meV; QW-structure; active layer; asymmetric InGaAsP QW optimisation; asymmetric QWs; asymmetric quantum wells; blue shift; enhanced QCSE; field variation; integrated laser/modulator; modulation behaviour; modulation properties; quantum confined Stark effect; red shift; strong blue shift; Absorption; Chirp modulation; Electrons; Optical computing; Optoelectronic devices; Potential well; Quantum cascade lasers; Quantum well lasers; Refractive index; Stark effect;
Journal_Title :
Photonics Technology Letters, IEEE
