DocumentCode
1278916
Title
Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer
Author
Wheeler, Chuck ; Daryanani, Sonu ; Mathine, David L. ; Maracas, George N. ; Allee, David R.
Author_Institution
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Volume
9
Issue
2
fYear
1997
Firstpage
194
Lastpage
196
Abstract
A new method to monolithically integrate a GaAs MESFET and a resonant cavity InGaAs QW LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as well as modulation results are briefly described.
Keywords
III-V semiconductors; MESFET integrated circuits; electro-optical modulation; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; optical fabrication; optical resonators; oxidation; semiconductor quantum wells; AlAs; GaAs MESFET; InGaAs QW LED; buried insulating layer; buried oxide layer; current confinement; dc bias; dissimilar devices; modulation results; monolithic integration; resonant cavity LED; thermal oxidation; Apertures; Gallium arsenide; Insulation; Light emitting diodes; MESFETs; Monolithic integrated circuits; Optical surface waves; Oxidation; Resonance; Surface emitting lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.553089
Filename
553089
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