Abstract :
Researchers from Eidgenössische Technische Hochschule Zürich (ETH Zürich) in Switzerland have achieved a record high average power for modelocked integrated external-cavity surface emitting laser (MIXSEL) oscillators. After absorber optimisation, structure design and thermal improvements, their laser, presented in this issue of Electronics Letters, produced 2.4 W at 10 GHz in 17 ps pulses. The MIXSEL chip is also simple with only two components, and has the potential for full wafer scale integration of the laser cavity.
Keywords :
integrated optics; laser beams; laser cavity resonators; laser mode locking; optical saturable absorption; semiconductor lasers; surface emitting lasers; MIXSEL chip; MIXSEL oscillators; absorber optimisation; frequency 10 GHz; full wafer scale integration; high average power; laser cavity; modelocked integrated external-cavity surface emitting laser; power 2.4 W; structural design; thermal improvements;
