Large field-induced refractive-index change on TM-polarized light in an InGaAlAs-InAlAs MQW waveguide structure

For optical modulation devices with low-loss and high efficiency, we have investigated field-induced refractive index change (/spl Delta/n) and absorption change (/spl Delta//spl alpha/) in the large detuning wavelength region where absorption is almost negligible using an InGaAlAs-InAlAs MQW waveguide structure. The result shows larger /spl Delta/n induced on TM-polarized light than that on TE-polarized light. Moreover, in induced on TM-polarized tight can become smaller than that on TE-polarized light. This suggests that TM-polarized light is more useful for low-loss and high-efficiency phase-modulation devices, especially large-scale matrix switches.