Title :
Wavelength dependence of noise figure of a travelling-wave GaInAsP/InP laser amplifier
Author :
Oberg, M.G. ; Olsson, N.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
1/21/1988 12:00:00 AM
Abstract :
Heterodyne noise measurements on a travelling-wave semiconductor laser amplifier show that the excess noise factor decreases with increasing wavelength. When the signal wavelength is changed from 1.48 μm to 1.55 μm the noise figure decreases from 10.5 dB to 6.0 dB
Keywords :
III-V semiconductors; amplifiers; electron device noise; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.48 to 1.55 micron; 6 to 10.5 dB; GaInAsP-InP; III-V semiconductors; excess noise factor; heterodyne noise measurements; laser amplifier; noise figure; optical communication equipment; signal wavelength; travelling-wave semiconductor laser; wavelength dependence;
Journal_Title :
Electronics Letters
