DocumentCode
1278990
Title
Wavelength dependence of noise figure of a travelling-wave GaInAsP/InP laser amplifier
Author
Oberg, M.G. ; Olsson, N.A.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
24
Issue
2
fYear
1988
fDate
1/21/1988 12:00:00 AM
Firstpage
99
Lastpage
100
Abstract
Heterodyne noise measurements on a travelling-wave semiconductor laser amplifier show that the excess noise factor decreases with increasing wavelength. When the signal wavelength is changed from 1.48 μm to 1.55 μm the noise figure decreases from 10.5 dB to 6.0 dB
Keywords
III-V semiconductors; amplifiers; electron device noise; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.48 to 1.55 micron; 6 to 10.5 dB; GaInAsP-InP; III-V semiconductors; excess noise factor; heterodyne noise measurements; laser amplifier; noise figure; optical communication equipment; signal wavelength; travelling-wave semiconductor laser; wavelength dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5531
Link To Document