Title :
Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure
Author :
Rong-Heng Yuang ; Jia-Lin Shieh ; Jen-Inn Chyi ; Jyh-Shin Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
We report the experimental work on the GaAs metal-semiconductor-metal photodetectors with recessed cathode and/or anode. The recessed-cathode detectors exhibit much superior dc and speed performance to the conventional one because of the enhancement of hole transport in this structure. Full-width at half-maximum and fall time of the temporal response were measured to be 21 and 13 ps at 5 V bias on a 50×50 μm2 detector with a finger width and spacing of 3 μm.
Keywords :
anodes; cathodes; gallium arsenide; hole mobility; metal-semiconductor-metal structures; optical fabrication; photodetectors; 13 ps; 21 ps; 3 mum; 5 V; GaAs; GaAs MSM photodetectors; GaAs metal-semiconductor-metal photodetectors; anode; dc performance; fall time; finger spacing; finger width; full-width at half-maximum; hole transport; overall performance improvement; recessed-cathode detectors; recessed-cathode structure; speed performance; temporal response; Absorption; Anodes; Cathodes; Councils; Detectors; Electrodes; Fabrication; Fingers; Gallium arsenide; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
