Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure

Author

Rong-Heng Yuang ; Jia-Lin Shieh ; Jen-Inn Chyi ; Jyh-Shin Chen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

9

Issue

2

fYear

1997

Firstpage

226

Lastpage

228

Abstract

We report the experimental work on the GaAs metal-semiconductor-metal photodetectors with recessed cathode and/or anode. The recessed-cathode detectors exhibit much superior dc and speed performance to the conventional one because of the enhancement of hole transport in this structure. Full-width at half-maximum and fall time of the temporal response were measured to be 21 and 13 ps at 5 V bias on a 50×50 μm² detector with a finger width and spacing of 3 μm.

Keywords

anodes; cathodes; gallium arsenide; hole mobility; metal-semiconductor-metal structures; optical fabrication; photodetectors; 13 ps; 21 ps; 3 mum; 5 V; GaAs; GaAs MSM photodetectors; GaAs metal-semiconductor-metal photodetectors; anode; dc performance; fall time; finger spacing; finger width; full-width at half-maximum; hole transport; overall performance improvement; recessed-cathode detectors; recessed-cathode structure; speed performance; temporal response; Absorption; Anodes; Cathodes; Councils; Detectors; Electrodes; Fabrication; Fingers; Gallium arsenide; Photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.553100

Filename

553100