Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

Author

Huang, P.Y. ; Sakamoto, K. ; Wang, K.L. ; Trinh, P. ; Jalali, B.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

9

Issue

2

fYear

1997

Firstpage

229

Lastpage

231

Abstract

A Si-based waveguide photodetector with a response in the 1.3-1.55-μm wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 /spl Aring/. The external quantum efficiency for a 400-μm-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55 μm. The dark current density at peak photoresponse is 40 pA/μm². The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported.

Keywords

Ge-Si alloys; absorption coefficients; epitaxial growth; infrared detectors; optical fibre couplers; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; /spl mu/m wavelength range; 1.3 to 1.55 mum; 800 A; Ge content; Si; Si substrate; Si-based waveguide photodetector; SiGeC; SiGeC alloy; absorption coefficient measurement; active absorption layer; alloy layer; dark current density; epitaxial SiGeC waveguide photodetector; epitaxially grown; external quantum efficiency; multiple SiGeC layers; peak photoresponse; pin photodiode; quantum efficiency; single-mode fiber coupling; thickness; waveguide facet; Absorption; Capacitive sensors; Germanium alloys; Germanium silicon alloys; Laser sintering; Optical waveguides; Photodetectors; Silicon alloys; Silicon germanium; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.553101

Filename

553101