Title :
Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs
Author :
Abrokwah, Jonathan K. ; Lucero, Rodolfo ; Hallmark, Jerry A. ; Bernhardt, Bruce
Author_Institution :
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs have been optimized for application to high-performance complementary GaAs circuits. Major issues with submicron and deep submicron (Lg⩽0.5-μm) P-channel HIGFETs have been the severe short-channel effects, such as high subthreshold leakage currents and high output conductances. With optimization of the p-type self-aligned implant schedule, control of impurity contamination at the substrate/buffer interfaces and increase of the resistivity of the unintentionally-doped GaAs buffers, high-performance submicron devices have been realized. Typically, 0.5-μm P-HIGFETs yielded room temperature transconductances of 90 mS/mm, drain currents at Vgs =Vds=-1.5 V of 63 mA/mm, and subthreshold leakage currents near 1 nA. Subthreshold slope of 90 mV/decade and output conductances under 5 mS/mm were realized
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; 0.5 micron; AlGaAs-InGaAs; complementary GaAs circuit; drain current; impurity contamination; output conductance; resistivity; self-aligned implant; short-channel effect; submicron p-channel (Al,Ga)As/(In,Ga)As HIGFET; substrate/buffer interface; subthreshold leakage current; subthreshold slope; transconductance; Circuits; Conductivity; Contamination; FETs; Gallium arsenide; Implants; Impurities; Insulation; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
