InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology

Author

Dehé, Alfons ; Pavlidis, Dimitris ; Hong, Kyushik ; Hartnagel, Hans L.

Author_Institution

Tech. Univ. Darmstadt, Germany

Volume

44

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1052

Lastpage

1059

Abstract

A novel InGaAs/InP micromachined thermoelectric sensor is presented. The key features of the reported sensors are the high thermal resistivity and high mobility of InGaAs lattice matched to InP, combined with a value of Seebeck coefficient that is acceptable for such applications. The anisotropic and selective surface bulk micromachining properties of this material system were successfully applied to devices aligned along the (010) orientation on a [100] InP wafer and the details of the technology used for this purpose are presented. A responsivity of 184 V/W and a relative detectivity of 7.1×108 cm Hz^-1/2/W have been demonstrated using this new sensor approach

Keywords

III-V semiconductors; Seebeck effect; gallium arsenide; indium compounds; infrared detectors; micromachining; microsensors; thermoelectric devices; InGaAs-InP; Seebeck coefficient; detectivity; lattice matched system; mobility; responsivity; surface bulk micromachining technology; thermal resistivity; thermoelectric infrared sensor; Anisotropic magnetoresistance; Conductivity; Indium gallium arsenide; Indium phosphide; Infrared sensors; Lattices; Sensor phenomena and characterization; Thermal resistance; Thermal sensors; Thermoelectricity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.595931

Filename

595931