GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 μm

Author

Sun, X. ; Hsu, J. ; Zheng, X.G. ; Campbell, J.C. ; Holmes, A.L., Jr.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

14

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

681

Lastpage

683

Abstract

We demonstrate a GaAsSb resonant-cavity-enhanced p-i-n photodetector grown on a GaAs substrate. The device exhibited a peak external quantum efficiency of 54% at the wavelength of 1.3 μm and a full-width at half-maximum of 8 nm. The breakdown voltage was 12 V and avalanche gain up to ten was observed. The absorption coefficient (/spl alpha/) of GaAs/sub 0.65/Sb/sub 0.35/ at 1.3 μm is estimated to be /spl sim/7.3×10³/cm.

Keywords

III-V semiconductors; absorption coefficients; gallium arsenide; gallium compounds; infrared detectors; mirrors; optical resonators; p-i-n photodiodes; semiconductor device breakdown; 1.3 micron; 12 V; 54 percent; GaAs; GaAs substrate; GaAs/sub 0.65/Sb/sub 0.35/; GaAsSb resonant-cavity-enhanced photodetector; GaAsSb-GaAs; absorption coefficient; avalanche gain; breakdown voltage; distributed Bragg reflector; full-width at half-maximum; p-i-n photodetector; peak external quantum efficiency; Absorption; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Optical materials; Photodetectors; Photodiodes; Quantum dot lasers; Resonance; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.998724

Filename

998724