Title :
Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy
Author :
Wong, Hon Sum ; Chan, Kevin K. ; Lee, Young ; Roper, Peter ; Taur, Yuan
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
We report a novel fabrication process for self-aligned, ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance. Self-aligned, ultrathin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. For n-MOSFETs with a 0.2 μm effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (Rsd/=333 Ω·μm) were obtained
Keywords :
MOSFET; characteristics measurement; semiconductor growth; silicon-on-insulator; vapour phase epitaxial growth; 0.2 mum; 242 mS/mm; 8 to 50 nm; I-V characteristics; Si-SiO2; effective channel length; fabrication process; low series resistance; low-temperature oxide; pattern-constrained epitaxy; saturation transconductance; selective epitaxial growth; ultrathin SOI n-MOSFET; ultrathin highly uniform thin-film SOI MOSFETs; undoped channel; Bonding; Dielectric devices; Doping; Electric breakdown; Epitaxial growth; Fabrication; MOSFET circuits; Silicon; Transconductance; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
