Title :
Tunneling source-body contact for partially-depleted SOI MOSFET
Author :
Chen, Vincent M C ; Woo, Jason C S
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
In this paper, a novel self-aligned asymmetric source-body contact is proposed based on the tunneling effect. The fabrication is relatively simple with only one extra angle implant step. Test structures have been fabricated and good electrical results were obtained. The improvements of this new approach in both device performance and manufacturing compared to fully-depleted SOI MOSFETs are discussed
Keywords :
MOSFET; ion implantation; leakage currents; silicon-on-insulator; tunnelling; angle implant step; device manufacturing; device performance; electrical results; leakage current; partially-depleted SOI MOSFET; self-aligned asymmetric source-body contact; test structures; tunneling source-body contact; Capacitance; Contacts; Doping; Fluctuations; MOSFET circuits; Process control; Silicon; Substrates; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
