DocumentCode
1279172
Title
Tunneling source-body contact for partially-depleted SOI MOSFET
Author
Chen, Vincent M C ; Woo, Jason C S
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
44
Issue
7
fYear
1997
fDate
7/1/1997 12:00:00 AM
Firstpage
1143
Lastpage
1147
Abstract
In this paper, a novel self-aligned asymmetric source-body contact is proposed based on the tunneling effect. The fabrication is relatively simple with only one extra angle implant step. Test structures have been fabricated and good electrical results were obtained. The improvements of this new approach in both device performance and manufacturing compared to fully-depleted SOI MOSFETs are discussed
Keywords
MOSFET; ion implantation; leakage currents; silicon-on-insulator; tunnelling; angle implant step; device manufacturing; device performance; electrical results; leakage current; partially-depleted SOI MOSFET; self-aligned asymmetric source-body contact; test structures; tunneling source-body contact; Capacitance; Contacts; Doping; Fluctuations; MOSFET circuits; Process control; Silicon; Substrates; Threshold voltage; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.595943
Filename
595943
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