Title :
The behavior of very high current density power MOSFETs
Author :
Evans, Jonathan ; Amaratunga, Gehan
Author_Institution :
Cambridge Univ., UK
fDate :
7/1/1997 12:00:00 AM
Abstract :
A new and complete description of the current carrying mechanisms of a power MOSFET is presented. This is aimed at clarifying the relatively complex behavior of such devices operating at high current densities, with particular reference to the drain-voltage dependence associated with quasi-saturation. This physical insight provides an elegant method of comparing the relative merits of the DMOS and UMOS structures
Keywords :
current density; power MOSFET; semiconductor device models; DMOS structures; UMOS structures; breakdown voltage; charge balance effects; current carrying mechanisms; drain-voltage dependence; power MOSFETs; quasi-saturation; very high current density; Analytical models; Breakdown voltage; Current density; Low voltage; MOSFET circuits; Medical simulation; Power MOSFET;
Journal_Title :
Electron Devices, IEEE Transactions on
