• DocumentCode
    1279176
  • Title

    The behavior of very high current density power MOSFETs

  • Author

    Evans, Jonathan ; Amaratunga, Gehan

  • Author_Institution
    Cambridge Univ., UK
  • Volume
    44
  • Issue
    7
  • fYear
    1997
  • fDate
    7/1/1997 12:00:00 AM
  • Firstpage
    1148
  • Lastpage
    1153
  • Abstract
    A new and complete description of the current carrying mechanisms of a power MOSFET is presented. This is aimed at clarifying the relatively complex behavior of such devices operating at high current densities, with particular reference to the drain-voltage dependence associated with quasi-saturation. This physical insight provides an elegant method of comparing the relative merits of the DMOS and UMOS structures
  • Keywords
    current density; power MOSFET; semiconductor device models; DMOS structures; UMOS structures; breakdown voltage; charge balance effects; current carrying mechanisms; drain-voltage dependence; power MOSFETs; quasi-saturation; very high current density; Analytical models; Breakdown voltage; Current density; Low voltage; MOSFET circuits; Medical simulation; Power MOSFET;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.595944
  • Filename
    595944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1279176