A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

Author

Hareland, S.A. ; Jallepalli, S. ; Chindalore, G. ; Shih, W.K. ; Tasch, A.F., Jr. ; Maziur, C.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

44

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1172

Lastpage

1173

Abstract

The effects of quantization of the inversion layer of MOSFET devices is an area of increasing importance as technology is aggressively scaled below 0.25 μm. Although electron inversion layers have attracted considerable interest, very little work has been reported for holes. This paper describes the implementation and results of a simple, computationally efficient model, appropriate for device simulators, for predicting the effects of hole inversion layer quantization. This model compares very favorably with experimental results and the predictions of a full-band, self-consistent Schrodinger-Poisson solver

Keywords

MOSFET; hole density; inversion layers; quantisation (quantum theory); semiconductor device models; 0.25 mum; C-V characteristics; Si-SiO₂; computationally efficient model; deep submicron MOSFET devices; device simulators; full-band self-consistent Schrodinger-Poisson solver; gate length; hole inversion layers; quantization; quantum mechanical effects; silicon PMOS devices; Charge carrier processes; Computational modeling; MOS devices; Microelectronics; Predictive models; Quantization; Quantum mechanics; Semiconductor process modeling; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.595947

Filename

595947