• DocumentCode
    1279197
  • Title

    Photodetector for 1550 nm formed in silicon-on-insulator slab waveguide

  • Author

    Ackert, Jason J. ; Murray, K.J. ; Jessop, Paul E. ; Knights, Andrew P.

  • Author_Institution
    McMaster Univ., Hamilton, ON, Canada
  • Volume
    48
  • Issue
    18
  • fYear
    2012
  • Firstpage
    1148
  • Lastpage
    1150
  • Abstract
    A report is presented of a monolithic silicon photodetector compatible with silicon-on-insulator photonic wire waveguides. The detectors comprise a pin junction with enhanced sensitivity to 1550 nm through the introduction of deep levels via ion-implantation and post-process thermal annealing. These detectors are particularly suited to evanescent sensor applications.
  • Keywords
    annealing; deep levels; integrated optics; ion implantation; optical waveguides; p-n junctions; photodetectors; silicon-on-insulator; Si; deep levels; evanescent sensor applications; ion-implantation; monolithic silicon photodetector; pin junction; post-process thermal annealing; silicon-on-insulator photonic wire waveguides; silicon-on-insulator slab waveguide; wavelength 1550 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.2484
  • Filename
    6294569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1279197