DocumentCode
1279203
Title
Influence of size factors in the electroluminescent emission of large area GaAs IREDs
Author
Reyna, Rosa F. ; Marti, Antonio ; Algora, Carlos ; Maroto, Juan C. ; Araújo, Gerardo L.
Author_Institution
Dept. Electron. Fisica, Ciudad Univ., Madrid, Spain
Volume
44
Issue
7
fYear
1997
fDate
7/1/1997 12:00:00 AM
Firstpage
1174
Lastpage
1176
Abstract
A model to explain the current dependence of the external quantum efficiency of GaAs LEDs is presented. First, this efficiency increases with the current due to the relative increase of the diffusion current in the total current; then, it remains constant since the diffusion current becomes dominant and finally, decreases due to series resistance effects, in the absence of thermal effects
Keywords
III-V semiconductors; current density; current distribution; gallium arsenide; infrared sources; light emitting diodes; semiconductor device models; size effect; GaAs; GaAs LEDs; IR emitting diodes; current dependence; diffusion current; electroluminescent emission; external quantum efficiency; large area GaAs IREDs; model; nonuniform current distribution; series resistance effects; size factors; Conductivity; Current density; Diodes; Electroluminescence; Equations; Gallium arsenide; Radiative recombination; Space charge; Thermal resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.595948
Filename
595948
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