Title :
Influence of size factors in the electroluminescent emission of large area GaAs IREDs
Author :
Reyna, Rosa F. ; Marti, Antonio ; Algora, Carlos ; Maroto, Juan C. ; Araújo, Gerardo L.
Author_Institution :
Dept. Electron. Fisica, Ciudad Univ., Madrid, Spain
fDate :
7/1/1997 12:00:00 AM
Abstract :
A model to explain the current dependence of the external quantum efficiency of GaAs LEDs is presented. First, this efficiency increases with the current due to the relative increase of the diffusion current in the total current; then, it remains constant since the diffusion current becomes dominant and finally, decreases due to series resistance effects, in the absence of thermal effects
Keywords :
III-V semiconductors; current density; current distribution; gallium arsenide; infrared sources; light emitting diodes; semiconductor device models; size effect; GaAs; GaAs LEDs; IR emitting diodes; current dependence; diffusion current; electroluminescent emission; external quantum efficiency; large area GaAs IREDs; model; nonuniform current distribution; series resistance effects; size factors; Conductivity; Current density; Diodes; Electroluminescence; Equations; Gallium arsenide; Radiative recombination; Space charge; Thermal resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
