Title :
Turn-on process in 4H-SiC thyristors
Author :
Levinshtein, Michael E. ; Palmour, John W. ; Rumyanetsev, Sergey L. ; Singh, Ranbir
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
7/1/1997 12:00:00 AM
Abstract :
Detailed turn-on measurements of 4H-Silicon Carbide (SiC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SiC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8×103 A/cm2) SiC thyristor has been found to be of the order of 3-5 ns. Pulsed turn on measurements show a residual voltage of only 50 V when a current density of 105 A/cm2 (35 A) was achieved in 20 ns
Keywords :
current density; semiconductor materials; silicon compounds; thyristors; 20 ns; 3 to 5 ns; 35 A; 400 V; 4H-SiC npnp thyristors; 50 V; SiC; blocking voltage; current density; forward drop; operating conditions; pulsed turn-on performance; residual voltage; rise time; turn-on measurements; Current density; Density measurement; Electric breakdown; Gallium arsenide; Pulse measurements; Silicon carbide; Temperature; Thermal conductivity; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
