• DocumentCode
    1279212
  • Title

    Turn-on process in 4H-SiC thyristors

  • Author

    Levinshtein, Michael E. ; Palmour, John W. ; Rumyanetsev, Sergey L. ; Singh, Ranbir

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    44
  • Issue
    7
  • fYear
    1997
  • fDate
    7/1/1997 12:00:00 AM
  • Firstpage
    1177
  • Lastpage
    1179
  • Abstract
    Detailed turn-on measurements of 4H-Silicon Carbide (SiC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SiC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8×103 A/cm2) SiC thyristor has been found to be of the order of 3-5 ns. Pulsed turn on measurements show a residual voltage of only 50 V when a current density of 105 A/cm2 (35 A) was achieved in 20 ns
  • Keywords
    current density; semiconductor materials; silicon compounds; thyristors; 20 ns; 3 to 5 ns; 35 A; 400 V; 4H-SiC npnp thyristors; 50 V; SiC; blocking voltage; current density; forward drop; operating conditions; pulsed turn-on performance; residual voltage; rise time; turn-on measurements; Current density; Density measurement; Electric breakdown; Gallium arsenide; Pulse measurements; Silicon carbide; Temperature; Thermal conductivity; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.595949
  • Filename
    595949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1279212