DocumentCode :
1279277
Title :
High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors
Author :
Chen, Jiann-Jong ; Gao, G.B. ; Unlu, M.S. ; Morkoc, H.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume :
26
Issue :
25
fYear :
1990
Firstpage :
2058
Lastpage :
2060
Abstract :
A model has been developed which generates the high-frequency ic-vce output characteristics of bipolar transistors from computed cutoff frequency against current density data. The presented results, which can be used directly for large-signal modelling are the first report of high-frequency output characteristics of bipolar transistors.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs heterojunction bipolar transistors; current density; cutoff frequency; high frequency output characteristics; large-signal modelling; model;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901328
Filename :
59596
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1279277
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