Title :
Comparative study of balance equation models
Author :
Tamura, K. ; Tomizawa, K.
Author_Institution :
Dept. of Comput. Sci., Meiji Univ., Kawasaki, Japan
fDate :
10/1/1999 12:00:00 AM
Abstract :
A comparative study of several balance equation models which have been used for the analysis of semiconductor devices was carried out. Simulation results from a simplified one-valley model, an energy transport model and a drift-diffusion model applied to an AlGaAs HBT are compared with those from a fully specified two-valley model. Based on the study, some features of each model are clarified
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; numerical analysis; semiconductor device models; AlGaAs; AlGaAs HBT; balance equation models; drift-diffusion model; energy transport model; one-valley model; semiconductor devices; two-valley model;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19990627
