DocumentCode
1279321
Title
Comparative study of balance equation models
Author
Tamura, K. ; Tomizawa, K.
Author_Institution
Dept. of Comput. Sci., Meiji Univ., Kawasaki, Japan
Volume
146
Issue
5
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
285
Lastpage
290
Abstract
A comparative study of several balance equation models which have been used for the analysis of semiconductor devices was carried out. Simulation results from a simplified one-valley model, an energy transport model and a drift-diffusion model applied to an AlGaAs HBT are compared with those from a fully specified two-valley model. Based on the study, some features of each model are clarified
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; numerical analysis; semiconductor device models; AlGaAs; AlGaAs HBT; balance equation models; drift-diffusion model; energy transport model; one-valley model; semiconductor devices; two-valley model;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19990627
Filename
809346
Link To Document