• DocumentCode
    1279346
  • Title

    Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation

  • Author

    Chiung-Hui Lai ; Kow-Ming Chang ; Chu-Feng Chen ; Cheng-Ting Hsieh ; Chin-Ning Wu ; Yu-Bin Wang ; Chung-Hsien Liu ; Kuo-Chin Chang

  • Author_Institution
    Dept. of Electron. Eng., Chung Hua Univ., Hsinchu, Taiwan
  • Volume
    7
  • Issue
    8
  • fYear
    2012
  • fDate
    8/1/2012 12:00:00 AM
  • Firstpage
    729
  • Lastpage
    732
  • Abstract
    The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found that the sensitivity of SGOI nanowires degrades when the Ge fraction exceeds 20%, because a high Ge fraction destabilises the surface state of SiGe. In this work, a top surface passivation plasma-enhanced chemical vapour deposition SiO2 layer deposited on a Si0.8Ge0.2 nanowire improved its sensitivity by ~1.3 times that of the nanowire sample without a top passivation layer.
  • Keywords
    Ge-Si alloys; biosensors; chemical vapour deposition; nanowires; passivation; surface states; GeSi; SGOI biosensor; SiGe-on-insulator nanowire biosensor; chemical vapour deposition; condensation; hole mobility; oxidation; sensitivity enhancement; surface state; top surface passivation;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2012.0214
  • Filename
    6294592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1279346