Anomalous variations of OFF-State leakage current in poly-Si TFT under static stress

Author

Chang, Kow Ming ; Chung, Yuan Hung ; Lin, Gin Ming

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

23

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

255

Lastpage

257

Abstract

Studies the anomalous variations of the OFF-state leakage current (I/sub OFF/) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I/sub OFF/ can be attributed to (1) I/sub OFF/ increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I/sub OFF/ decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (/spl sim/(V_Gstress V_Dstress)/T/sub OX/) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (/spl sim/V_Dstress/L/sub CH/).

Keywords

elemental semiconductors; grain boundaries; hot carriers; impact ionisation; leakage currents; semiconductor device reliability; silicon; thin film transistors; OFF-state leakage current; Si; channel hot electrons; channel/bottom oxide interface; dominant mechanisms; drain bias; gate oxide/channel interface; grain boundaries; impact ionization effect; lateral electric field; polysilicon TFT; source region; static stress; vertical field; Active matrix liquid crystal displays; Charge carrier processes; Electron traps; Forward contracts; Grain size; Hot carriers; Impact ionization; Leakage current; Stress; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.998868

Filename

998868