Author :
Jagannathan, B. ; Khater, M. ; Pagette, F. ; Rieh, J.-S. ; Angell, D. ; Chen, H. ; Florkey, J. ; Golan, F. ; Greenberg, D.R. ; Groves, Rob ; Jeng, S.J. ; Johnson, J. ; Mengistu, E. ; Schonenberg, K.T. ; Schnabel, C.M. ; Smith, P. ; Stricker, A. ; Ahlgren,
Author_Institution :
IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY, USA
Abstract :
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (fT) of 207 GHz and an fmax extrapolated from Mason´s unilateral gain of 285 GHz. fmax extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12×2.5 μm2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm2). Smaller transistors (0.12×0.5 μm2) have an fT of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 k/spl Omega//sq. and an open-base breakdown voltage BV/sub CEO/ of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting fT at small lateral dimensions.
Keywords :
Ge-Si alloys; capacitance; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; semiconductor materials; 1.7 V; 180 GHz; 194 GHz; 207 GHz; 285 GHz; 800 muA; Mason´s unilateral gain; SiGe; lateral dimensions; linear current; open-base breakdown voltage; parasitic capacitance; parasitic resistance; pinched base sheet resistance; self-aligned device structure; self-aligned npn transistors; unity gain cutoff frequency; BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Germanium silicon alloys; Indium phosphide; Integrated circuit technology; Manufacturing; Parasitic capacitance; Silicon germanium;
