Title :
Threshold voltage model for MOSFETs with high-k gate dielectrics
Author :
Liu, Xiaoyan ; Kang, Jinfeng ; Sun, Lei ; Han, Ruqi ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
5/1/2002 12:00:00 AM
Abstract :
An analytic threshold voltage model, which can account for the short channel effect and the fringing field effect of sub-100 nm high-k gate dielectric MOSFETs, has been developed. The model considers the two-dimensional (2D) effect both in silicon bulk and in gate dielectric layer. The results of the model are consistent with 2D numerical simulation results.
Keywords :
MOSFET; dielectric thin films; semiconductor device models; MOSFETs; fringing field effect; high-k gate dielectrics; numerical simulation results; short channel effect; threshold voltage model; two-dimensional effect; Analytical models; Boundary conditions; Dielectrics; MOSFETs; Numerical simulation; Poisson equations; Silicon; Sun; Threshold voltage; Two dimensional displays;
Journal_Title :
Electron Device Letters, IEEE
