Title :
Silicon film thickness considerations in SOI-DTMOS
Author :
Sivaram, P. ; Anand, B. ; Desai, Madhav P.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
fDate :
5/1/2002 12:00:00 AM
Abstract :
We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phenomenon using two-dimensional (2-D) device simulations and conclude that a film thickness greater than 100 nm is required. This sets a criterion for SOI devices to be used as dynamic threshold MOSFETs.
Keywords :
MOSFET; semiconductor device models; semiconductor thin films; silicon-on-insulator; 100 nm; SOI-DTMOS; Si film thickness considerations; Si-SiO/sub 2/; body bias; body effect; dynamic threshold MOSFETs; enhanced drive currents; floating body voltage; fully depleted SOI; partially depleted SOI; two-dimensional device simulations; MOS devices; MOSFETs; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Substrates; Thick films; Thin film devices; Threshold voltage; Two dimensional displays;
Journal_Title :
Electron Device Letters, IEEE
