DocumentCode
1279470
Title
Silicon film thickness considerations in SOI-DTMOS
Author
Sivaram, P. ; Anand, B. ; Desai, Madhav P.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Volume
23
Issue
5
fYear
2002
fDate
5/1/2002 12:00:00 AM
Firstpage
276
Lastpage
278
Abstract
We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phenomenon using two-dimensional (2-D) device simulations and conclude that a film thickness greater than 100 nm is required. This sets a criterion for SOI devices to be used as dynamic threshold MOSFETs.
Keywords
MOSFET; semiconductor device models; semiconductor thin films; silicon-on-insulator; 100 nm; SOI-DTMOS; Si film thickness considerations; Si-SiO/sub 2/; body bias; body effect; dynamic threshold MOSFETs; enhanced drive currents; floating body voltage; fully depleted SOI; partially depleted SOI; two-dimensional device simulations; MOS devices; MOSFETs; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Substrates; Thick films; Thin film devices; Threshold voltage; Two dimensional displays;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.998875
Filename
998875
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